The 2N6897 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed by Fairchild Semiconductor Corporation. It is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit.
The 2N6897 is a P‑Channel enhancement mode silicon‑gate power MOSFET designed for high‑speed switching applications such as regulators, converters, motor drivers and relay drivers. It can be driven directly from integrated circuits and offers low on‑resistance and high input impedance.
Key specifications include a continuous drain current of -12 A, a drain‑to‑source voltage rating of -100 V, a gate‑to‑source voltage limit of 6 V, and on‑resistance around 0.3 Ω. The device is supplied in a JEDEC TO‑204AA package and meets standard absolute maximum ratings for temperature and voltage.
| Continuous Drain Current | -12 A |
|---|---|
| Drain‑to‑Source Voltage | -100 V |
| Gate‑to‑Source Voltage | 6.0 V |
The device is rated for a drain‑to‑source voltage of -100 V.
It can handle a continuous drain current of -12 A.
The gate‑to‑source voltage limit is 6.0 V.