The SSH22N50A is a 500V, 22A, N-channel power MOSFET from Fairchild Semiconductor Corporation. It features avalanche rugged technology, rugged gate oxide technology, lower input capacitance, improved gate charge, extended safe operating area, lower leakage current, and lower RDS(ON).
The SSH22N50A is an N‑channel power MOSFET featuring a 500 V drain‑source breakdown voltage, low gate charge, and rugged gate oxide technology. It is designed for high‑voltage, high‑current applications with a continuous drain current of 22 A at 25 °C.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and several test circuits such as the gate‑charge test and diode recovery test. It also includes trademark information and product status definitions for design and production phases.
| Drain-to-Source Voltage (BVdss) | 500 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | 22 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0 V |
| Input Capacitance (Ciss) | 3940 – 5120 pF |
| Total Gate Charge (Qg) | 182 – 236 nC |
The maximum drain-to-source voltage is 500 V.
It can handle a continuous drain current of 22 A at 25 °C.
The gate threshold voltage ranges from 2.0 V to 4.0 V.
The input capacitance is between 3940 pF and 5120 pF.