This document describes the features and characteristics of FDP5680/FDB5680. The product has a drain-source voltage of 60V, gate-source voltage of ±20V, maximum drain current of 40A, and total power dissipation of 65W at TC = 25°C. It is suitable for operating and storing in a temperature range of -65°C to +175°C.
The FDP5680/FDB5680 is a high‑voltage power transistor designed for applications requiring up to 60 V drain‑source voltage and 40 A continuous drain current. The datasheet provides absolute maximum ratings, detailed electrical characteristics, and thermal parameters.
Packaging options include TO‑220 and TO‑263AB/D2PAK formats with tape‑and‑reel or bulk shipping configurations. Mechanical dimensions, reel sizes, and moisture‑sensitive handling instructions are also listed.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | ±20 V |
| Continuous Drain Current (I_D) | 40 A |
| Total Power Dissipation | 65 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.3 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Input Capacitance (Ciss) | 1850 pF |
| Output Capacitance (Coss) | 230 pF |
The maximum drain‑source voltage is 60 V.
It can handle a continuous drain current of 40 A.
Junction‑to‑Case resistance is 2.3 °C/W and Junction‑to‑Ambient resistance is 62.5 °C/W.