The IRFI730G is a HEXFET® power MOSFET offered in a TO‑220 Fullpak package with high voltage isolation (2.5 kV RMS) and low thermal resistance. The package eliminates the need for additional insulating hardware in commercial‑industrial applications and can be mounted to a heatsink with a single clip or screw.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑to‑source breakdown voltage, on‑resistance, gate threshold, and capacitances, as well as thermal performance data and test circuit diagrams. Appendices provide mechanical drawings and part‑marking information.
| Drain‑to‑Source Breakdown Voltage (VDS) | 400 V |
|---|---|
| Static Drain‑to‑Source On‑Resistance (RDS(on)) | 1.0 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Input Capacitance (Ciss) | 700 pF |
| Output Capacitance (Coss) | 170 pF |
| Single Pulse Avalanche Energy | 200 mJ |
The IRFI730G can withstand a drain‑to‑source breakdown voltage of 400 V.
The static drain‑to‑source on‑resistance is specified as 1.0 mΩ.
The gate‑threshold voltage ranges from 2.0 V to 4.0 V.