The IRF1902 is an N-channel HEXFET power MOSFET from International Rectifier that has extremely low on-resistance and excellent thermal characteristics, making it ideal for a variety of power applications.
The IRF1902 is an N‑channel HEXFET power MOSFET from International Rectifier featuring ultra‑low on‑resistance and high efficiency for battery and load‑management applications. The device is offered in a surface‑mount SO‑8 package and is compatible with vapor‑phase, infrared, or wave soldering processes.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, typical output and transfer curves, capacitance data, gate‑charge information, and thermal performance. Package dimensions, tape‑and‑reel handling, and ordering information are also provided.
| Drain‑to‑Source Voltage (VDS) Max | 20 V |
|---|---|
| Continuous Drain Current (ID) @ VGS=4.5 V, Ta=25 °C | 4.2 A |
| Gate Threshold Voltage (VGS(th)) Typical | 0.70 V |
| Total Gate Charge (Qg) Typical | 5.0 nC |
| Input Capacitance (Ciss) Typical | 310 pF |
| Output Capacitance (Coss) Typical | 130 pF |
| Junction‑to‑Ambient Thermal Resistance (RθJA) Typical | 50 °C/W |
The IRF1902 can withstand up to 20 V drain‑to‑source voltage.
It can conduct a continuous drain current of 4.2 A under those conditions.
The typical gate threshold voltage is about 0.70 V.
The device is housed in an SO‑8 package and is available in tape‑and‑reel form.