This document is about International Rectifier's RADHard HEXFET® technology providing high-performance power MOSFETs for space applications. These devices have the advantages of low Rdson and low gate charge, suitable for switching applications such as DC to DC converters and motor control.
The document describes a Radiation Hardened Power MOSFET from International Rectifier, specifically part number IRHE7230 with the military specification JANSR2N7262U. It is an N-channel device utilizing Surface Mount (LCC-18) technology and is rated for 200V drain-to-source voltage.
| Continuous Drain Current @ 25°C | 5.5 A |
|---|---|
| Continuous Drain Current @ 100°C | 3.5 A |
| Drain-to-Source Breakdown Voltage | 200 V |
| Static Drain-to-Source On-State Resistance (Typ) | 0.35 Ohm |
| Gate Threshold Voltage (Typ) | 4 V |
| Total Gate Charge (Typ) | 50 nC |
| Operating Junction Temperature Range | -55 to 150 °C |
The device IRHE7230 has a radiation level tolerance of 100K Rads (Si).
The device uses Surface Mount (LCC-18) technology.
Yes, it complies with MIL-PRF-19500/601 and is designated as JANSR2N7262U.