This document describes the features and characteristics of an automotive MOSFET product, including logic level, advanced process technology, ultra low on-resistance, high temperature operating capability, fast switching, and repetitive avalanche capability.
This document is a technical datasheet for the International Rectifier HEXFET Power MOSFET, specifically models IRL3705Z, IRL3705ZS, and IRL3705ZL. The device is designed for automotive applications and utilizes advanced process technology to achieve ultra-low on-resistance per silicon area.
| Id (Continuous Drain Current @ 25°C) | 75 A |
|---|---|
| Tj (Operating Junction Temperature) | -55 to +175 °C |
The device supports an operating junction temperature range of -55°C to +175°C.
The package-limited continuous drain current at 25°C is 75A.