The datasheet provides specifications for International Rectifier IRF2804PbF, IRF2804SPbF, and IRF2804LPbF HEXFET power MOSFETs, including ratings…
This document details the electrical and thermal specifications of the IRF2804 series HEXFET power MOSFETs, which are designed for automotive and other high‑current applications. Key features include a low on‑resistance, high current capability, and a 175 °C maximum junction temperature.
The MOSFETs are offered in D2Pak, TO‑220AB, and TO‑262 packages, with comprehensive data on static and dynamic characteristics, avalanche ratings, diode behavior, and gate charge performance to aid designers in selecting the appropriate device for their circuits.
| Drain‑to‑Source Breakdown Voltage (VDSS) | 40 V |
|---|---|
| Static On‑Resistance (RDS(on)) | 2.0 mΩ |
| Maximum Junction Temperature (Tjmax) | 175 °C |
| Gate Threshold Voltage (VGS(th)) | 2.0 V |
| Total Gate Charge (Qg) – D2Pak | 160 nC |
| Available Packages | D2Pak, TO‑220AB, TO‑262 |
The maximum drain‑to‑source breakdown voltage is 40 V.
The devices are rated for a maximum junction temperature of 175 °C.
They are available in D2Pak, TO‑220AB, and TO‑262 packages.