JANTX2N6786 and JANTXV2N6786 are two N-channel power MOSFETs with low on-resistance, high transconductance, high reliability and other features. They are suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
The JANTX2N6786 and JANTXV2N6786 are N‑channel HEXFET power MOSFETs rated for 400 V operation. They feature low on‑state resistance, high transconductance, and fast switching, making them suitable for switching power supplies, motor controls, inverters, and high‑energy pulse circuits.
The document provides absolute maximum ratings, detailed electrical parameters, thermal resistance data, and mechanical dimensions for the TO‑205AF (modified TO‑39) package. It also includes typical output and transfer characteristics, safe operating area curves, and test circuit diagrams for designers.
| Drain-to-Source Breakdown Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) – JANTX2N6786 | 1.25 A |
| Continuous Drain Current (ID) – JANTXV2N6786 | 0.80 A |
| Maximum Power Dissipation (PD) | 15 W |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Total Gate Charge (Qg) | 67 nC |
| Package | TO‑205AF (Modified TO‑39) |
The continuous drain current is 1.25 A.
The device can dissipate up to 15 W.
It is housed in a TO‑205AF (Modified TO‑39) package.
The drain‑to‑source breakdown voltage is 400 V.