This document is a technical datasheet for the IRL540 HEXFET Power MOSFET manufactured by International Rectifier. It describes the device as part of the Third Generation HEXFET family, highlighting features such as fast switching, ruggedized design, low on-resistance, and logic-level gate drive capabilities.
| Gate-to-Source Voltage Max. | +/- 10 V |
|---|---|
| Operating Junction Temperature Range | -85 to +175°C |
| Static Drain-to-Source On-Resistance Typ. | 0.0772 Ohm |
| Drain-to-Source Breakdown Voltage Min. | 100 V |
The device can operate with a junction temperature range from -85 to +175°C.
The static drain-to-source on-resistance (Rds(on)) is typically 0.0772 Ohm.