This data sheet provides the absolute maximum ratings for the PD-90396G HEXFET® MOSFET, including continuous drain current, pulsed drain current, maximum power dissipation, linear derating factor, gate-to-source voltage, single pulse avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, operating junction temperature, storage temperature range, lead temperature, weight, etc.
This document is a technical datasheet for the International Rectifier IRFG110, a 100V quad N-channel MOSFET utilizing HEXFET technology. The device features hermetically sealed packaging that provides electrical isolation between the die and the heatsink, eliminating the need for additional isolating material.
| Continuous Drain Current (25°C) | 1.0 A |
|---|---|
| Static Drain-to-Source On-State Resistance | 0.7 Q |
| Drain-to-Source Breakdown Voltage | 100 V |
| Max Power Dissipation (25°C) | 1.4 W |
| Operating Junction Temperature Range | -55 to 150 °C |
The part supports a continuous drain current of 1.0 A when the junction temperature is 25°C.
The device has a maximum power dissipation rating of 1.4 W when the case temperature is 25°C.
The device operates within a junction temperature range of -55 to 150 °C.