IRF1503 is an automotive electronic power device produced by irf company. This device uses advanced process technology to achieve extremely low on-resistance, 175 ° C operating temperature, fast switching speed and improved repetitive avalanche capability, suitable for a variety of automotive electronic applications.
The IRF1503 is a HEXFET® power MOSFET designed for automotive electrical systems such as 14 V power steering. It features an advanced process that provides ultra‑low on‑resistance, a 175 °C junction rating, fast switching, and a high repetitive avalanche capability.
The device is supplied in a TO‑220AB package and includes detailed electrical characteristics, thermal data, and layout recommendations for low stray inductance and reliable operation in demanding automotive environments.
| Continuous Drain Current (25 °C, 10 V) | 240 A |
|---|---|
| Continuous Drain Current (100 °C, 10 V) | 170 A |
| Pulsed Drain Current | 960 A |
| Power Dissipation (25 °C) | 330 W |
| Gate‑to‑Source Voltage (Vgs) | +20 V |
| Junction‑to‑Case Thermal Resistance (Rjc) | 0.45 °C/W |
| Operating Junction Temperature Range | -55 °C to +175 °C |
| Static Drain‑to‑Source On‑Resistance (Rds(on)) | 26 mΩ (typ.) |
| Total Gate Charge (Qg) | 200 nC |
| Single Pulse Avalanche Energy | 510 mJ |
The IRF1503 can handle up to 240 A continuous drain current at 25 °C with a 10 V drain‑source voltage.
The device is rated for a maximum gate‑to‑source voltage of +20 V.
The MOSFET is supplied in a TO‑220AB package.
It operates from –55 °C up to +175 °C junction temperature.