This document is a data sheet for the IRFD220, a third-generation HEXFET Power MOSFET from International Rectifier. The device features fast switching speeds, ruggedized design, low on-resistance, and ease of paralleling. It is available in a 4-pin DIP package designed for automatic insertion and stacking.
| Drain-to-Source Breakdown Voltage | 200V |
|---|---|
| Static Drain-to-Source On-Resistance | 0.80 Ω |
| Gate Threshold Voltage (Typ) | 2 to 4 V |
| Operating Junction Temperature Range | -55 to +150°C |
This MOSFET can dissipate up to 1 watt when the case temperature is maintained at 25°C.