The Fairchild IRF130‑133 series are N‑channel enhancement‑mode power MOSFETs designed for high‑power, high‑speed applications such as switching power supplies, UPS, motor controls and pulse circuits. The document provides detailed electrical, thermal and switching characteristics for each part in the series.
Key sections include product summaries, maximum ratings, electrical characteristics (VDS, ID, RDS(on), VGS(th)), thermal resistance, switching times, and typical performance curves. The data support designers in selecting the appropriate MOSFET for their power conversion needs.
| Drain‑to‑Source Voltage (VDS) | 100 V (IRF130) |
|---|---|
| Continuous Drain Current (ID) | 4 A (IRF130) |
| On‑Resistance (RDS(on)) | 0.18 Ω (IRF130) |
| Total Gate Charge (Qg) | 30 nC |
The IRF130 MOSFET is rated for a maximum drain‑to‑source voltage of 100 V.
The typical on‑resistance (RDS(on)) of the IRF130 is 0.18 Ω.
The total gate charge is specified as 30 nC.