The Fairchild IRF430‑433 and IRF830‑833 series are N‑channel enhancement‑mode power MOSFETs designed for high‑voltage, high‑speed applications such as offline switching power supplies, UPS, motor controls and driver circuits. They are offered in TO‑220AB packages with ratings up to 500 V drain‑source voltage and 45 A continuous drain current.
The datasheet provides maximum ratings, detailed electrical characteristics (breakdown voltage, threshold voltage, on‑resistance, capacitances, switching times), typical performance curves, and test circuit diagrams to aid designers in selecting and applying these devices.
| Drain‑Source Voltage (VDS) | 500 V (IRF430/432) / 450 V (IRF830/832) |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 45 A |
| Total Power Dissipation (PD) | 75 W (IRF430/432) / 78 W (IRF830/832) |
| Input Capacitance (CISS) | 800 pF |
| Total Gate Charge (Qg) | 30 nC |
The IRF430 series is rated for a maximum drain‑source voltage of 500 V.
It can handle a continuous drain current of 45 A.