This document describes the features and characteristics of HUFA76404DK8T N-Channel Dual MOSFET, including maximum rated voltage, drain current, power dissipation, etc.
The HUFA76404DK8T is a dual N‑Channel MOSFET designed for automotive power‑train and DC‑DC converter applications. It offers a 62 V drain‑source rating, low Miller charge and optimized high‑frequency efficiency.
The document provides maximum ratings, electrical and switching characteristics, thermal data, test circuits and SPICE thermal models to aid designers in selecting and integrating the device.
| Drain‑to‑Source Voltage (V_DSS) | 62 V |
|---|---|
| Power Dissipation (P_D) | 25 W |
| Operating Temperature Range | -55 °C to 150 °C |
| Total Gate Charge (Q_g) | 3.8 nC (typ) |
| Input Capacitance (C_iss) | 250 pF |
The device is rated for a maximum drain‑to‑source voltage of 62 V.
The typical total gate charge is 3.8 nC at a 5 V gate voltage.