2SC3553 is a silicon NPN epitaxial transistor designed for low frequency amplification. It has low operating voltage and high current transfer ratio. This product is suitable for low frequency amplifier applications.
This document is a technical datasheet for the Hitachi 2SC3553, a silicon NPN epitaxial transistor designed primarily as a low-frequency amplifier. The device features an SPak package with three terminals: Emitter, Collector, and Base.
The datasheet provides comprehensive electrical specifications measured at a temperature of 25°C. Key parameters include collector to base breakdown voltage (Vceo), DC current transfer ratio (hFE) ranging from 60 to 320, and maximum collector power dissipation of 300 mW.
| Package Type | SPak |
|---|---|
| Maximum Collector Current | 500 mA |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Transfer Ratio (hFE) | 60 |
| Maximum DC Current Transfer Ratio (hFE) | 320 |
The document lists the primary application as a low frequency amplifier.
The absolute maximum rating for collector to emitter voltage (Vceo) is 35 V.