RN1407,RN1408,RN1409 is a NPN type transistor produced by TOSHIBA. It is mainly used in switching, inverter circuits, interface circuits and driver circuits. The transistor has the characteristic of built-in bias resistors, which can simplify circuit design, reduce component quantity and manufacturing process.
The datasheet describes Toshiba's RN1407, RN1408, and RN1409 silicon NPN transistors, their epitaxial structure, and typical applications such as switching, inverter, and interface circuits. It includes package information (JEDEC TO‑236, EIAJ SC‑59) and physical dimensions.
Key electrical specifications are listed, including maximum voltage ratings, collector current, power dissipation, and temperature limits. The document also provides a section on product‑use restrictions, advising that these devices are intended for general electronics and should not be used in safety‑critical or high‑reliability systems.
| Emitter‑base voltage (VEBO) RN1408 | 7 V |
|---|---|
| Emitter‑base voltage (VEBO) RN1409 | 15 V |