This document describes the features and characteristics of the 2SK1098-M N-channel MOS-FET F-III Series product, including high current, low on-resistance, no secondary breakdown, low driving power, high forward transconductance, etc. It is suitable for applications such as motor control, general purpose power amplifier, and DC-DC converters.
The 2SK1098-M is an N‑channel MOSFET from Fujielectric's F‑Ill series, rated for 150 V drain‑source voltage and 6 A continuous drain current. It is intended for motor‑control, power‑amplifier, and DC‑DC converter applications.
Key specifications include a maximum power dissipation of 30 W, on‑state resistance as low as 0.40 Ω, and typical gate threshold voltage of 1.5 V. The datasheet also contains characteristic curves, thermal data, and recommended operating conditions.