The FUJI 2SK1102-01MR is a high‑speed, low‑on‑resistance power MOS‑FET designed for switching regulators, UPS, DC‑DC converters, and general‑purpose power amplification. It offers a 500 V drain‑source rating, 10 A continuous drain current, and a low gate drive requirement.
The datasheet lists absolute maximum ratings, typical electrical characteristics, and thermal performance curves, including on‑state resistance versus temperature, gate‑threshold voltage trends, and safe operating area diagrams. Designers can use these data to evaluate the device for high‑efficiency power conversion applications.
| Gate‑Source Voltage (VGS) | +30 V |
|---|---|
| Power Dissipation (PD) | 50 W |
The gate‑source voltage is limited to +30 V.
The MOSFET can dissipate up to 50 W under specified conditions.