The Fuji 2SK1101-01MP is an N‑channel silicon power MOSFET designed for high‑speed switching, low on‑resistance, and low driving power. It is suitable for switching regulators, DC‑DC converters, and general‑purpose power amplifiers.
The datasheet lists key parameters such as a 450 V drain‑source breakdown voltage, 10 A continuous drain current, 0.65 mΩ typical on‑state resistance, and typical capacitances of 1.2 nF (Ciss) and 160 pF (Coss). Thermal resistance values and safe operating area curves are also provided for design reference.
| Input capacitance (Ciss) typical | 1.2 nF |
|---|---|
| Output capacitance (Coss) typical | 160 pF |
Typical input capacitance is 1.2 nF and output capacitance is 160 pF.