The 2SK1087-MR is an N‑channel silicon power MOSFET designed for high‑current, low‑on‑resistance applications such as motor controllers, general‑purpose power amplifiers, and DC‑DC converters. It offers a high forward transconductance and low secondary breakdown.
The datasheet lists maximum voltage and current ratings, on‑state resistance, capacitances, and thermal parameters, along with typical output, transfer, and capacitance characteristics presented in graphical form.
| Continuous drain current (ID) | 12 A |
|---|---|
| Pulsed drain current (ID,pulse) | 48 A |
| Gate‑source peak voltage (VGS) | +20 V |
| Maximum power dissipation (PD) | 35 W |
| Thermal resistance (RθJC) | 3.56 °C/W |
It can handle a continuous drain current of 12 A.
The device can dissipate up to 35 W of power.