The 2SK1096-MR is an N‑channel silicon power MOSFET designed for high‑current, low‑on‑resistance applications such as motor controllers, power amplifiers, and DC‑DC converters. Key features include a low gate‑driving power requirement, high forward transconductance, and robust thermal performance.
The document lists absolute maximum ratings (e.g., 60 V drain‑source breakdown, 13 A continuous drain current, 30 W power dissipation) and detailed electrical characteristics such as on‑state resistance, capacitances, and threshold voltage. Graphs illustrate typical output, transfer, and capacitance behavior across voltage and temperature ranges, aiding designers in selecting the device for their circuits.
| Continuous Drain Current (I_D) | 13 A |
|---|---|
| Maximum Power Dissipation (P_D) | 30 W |
The device can handle a continuous drain current of 13 A.