The 2SK1086-MR is an N‑channel silicon power MOSFET designed for high‑current, low‑on‑resistance applications such as motor controllers, power amplifiers, and DC‑DC converters. It offers high forward transconductance, low driving power, and no secondary breakdown.
Key specifications include a maximum drain‑source voltage of 60 V, continuous drain current of 20 A, pulsed drain current of 80 A, on‑state resistance as low as 0.075 Ω, and a maximum power dissipation of 35 W. Thermal resistance values and typical capacitance figures are also provided for design reference.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Continuous drain current (ID) | 20 A |
| Pulsed drain current (ID(p)) | 80 A |
| Gate‑source peak voltage (VGS) | 20 V |
| Maximum power dissipation (Pmax) | 35 W |
| On‑state resistance (RDS(on)) | 0.075 Ω (typ) |
| Forward transconductance (gm) | 8‑15 S |
| Input capacitance (Ciss) | 860‑1300 pF |
| Output capacitance (Coss) | 300‑450 pF |
The device is rated for a maximum drain‑source voltage of 60 V.
It can conduct a continuous drain current of 20 A.
Typical on‑state resistance is about 0.075 Ω at 10 A.
Input capacitance ranges from 860 to 1300 pF, and output capacitance from 300 to 450 pF.