2SK1083-MR is a N-channel MOS-FET with high current, low on-resistance, no secondary breakdown, low drive power, and high forward transconductance. It is suitable for motor control, general purpose power amplifier, DC-DC converters and other applications.
The 2SK1083-MR belongs to the F‑III series of N‑channel MOSFETs. It offers high current capability, low on‑resistance (typical 0.22 Ω), and low driving power, making it suitable for motor‑control, power‑amplifier and DC‑DC converter applications.
Key specifications include a 60 V drain‑source breakdown voltage, 8 A continuous drain current, 20 W maximum power dissipation, and a +20 V gate‑source rating. Thermal resistance is 6.25 °C/W from channel to case, and the device is packaged in a TO‑220F15 case.