2SA0921 (2SA921) is a silicon PNP epitaxial planar type transistor for high breakdown voltage low-noise amplification. It is complementary to 2SC1980.
The Panasonic 2SA0921 (also listed as 2SA921) is a silicon PNP epitaxial planar transistor designed for high breakdown voltage and low‑noise amplification. It is complementary to the 2SC1980 and intended for standard electronic equipment.
The datasheet lists absolute maximum ratings, electrical characteristics, and typical performance curves, together with export and usage precautions. Key parameters include a collector‑emitter voltage of 120 V, collector current up to 20 mA, and a transition frequency of 200 MHz.
| Collector‑base voltage (V_CBO) | -120 V |
|---|---|
| Collector‑emitter voltage (V_CEO) | -120 V |
| Emitter‑base voltage (V_EBO) | -120 V |
| Continuous collector current (I_C) | 20 mA |
| Peak collector current | 50 mA |
| Collector power dissipation (P_C) | 250 mW |
| Junction temperature (T_j) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Transition frequency (f_T) | 200 MHz |
| Noise voltage (NV) | 150 mV |
| Resistance (R) | 100 kΩ |
The Panasonic 2SA0921 is rated for a collector‑emitter voltage of 120 V.
The device can handle a continuous collector current of 20 mA and a peak collector current of 50 mA.
It can be stored from –55 °C to +150 °C.
Yes, an export permit from the Japanese government is required for controlled products.