This document is the datasheet for 2SA0885, introduces the features of the product, including: output power, package type, absolute maximum ratings, electrical characteristics, etc.
The Panasonic 2SA0885 is a silicon PNP epitaxial planar transistor intended for low‑frequency power amplification. The datasheet provides detailed electrical characteristics, absolute maximum ratings, and package information for design engineers.
Key sections include features, maximum voltage and current ratings, transition frequency, and safety/export precautions for the device.
| Collector‑base voltage (V CBO) | -45 V |
|---|---|
| Collector‑emitter voltage (V CEO) | -35 V |
| Emitter‑base voltage (V EBO) | -5 V |
| Collector current (I C) | -1 A |
| Peak collector current (I CP) | -1.5 A |
| Collector power dissipation (P C) | 1.2 W |
| Junction temperature (T j) | 150 °C |
| Storage temperature (T stg) | -55 to +150 °C |
The maximum collector‑base voltage is -45 V.
The transistor is rated for a collector current of up to -1 A.