EMF8 is a dual transistor from ROHM that is used in power management circuits. It features 1) A single package for power switching circuits; 2) Mounting cost and area can be cut in half.
This document describes the EMF8 dual‑transistor family, which combines the 2SC5585 and DTC144EE transistors in a single EMT6 package. It includes package dimensions, marking codes, and the benefits of using a single‑package power switching solution.
The datasheet lists absolute maximum ratings, typical electrical parameters such as breakdown voltages, transition frequency, DC current gain, and resistance values, as well as characteristic curves for various operating conditions. Legal and usage notes are provided at the end of the document.
| Package type | EMT6 |
|---|---|
| Maximum power dissipation per element | 120 mW |
| Collector‑emitter breakdown voltage (BVCEO) | 12 V |
| Collector‑base breakdown voltage (BVCBO) | 15 V |
| Emitter‑base breakdown voltage (BVEBO) | 6 V |
| Transition frequency (fT) – Tr1 | Typical 320 MHz |
| Transition frequency (fT) – DTr2 | Typical 250 MHz |
| DC current gain (hFE) | Typical 270 – 680 |
| Input resistance (R1) | 32.9 – 61.1 kΩ |
| Resistance ratio (R2/R1) | 0.8 – 1.2 |
Each element may not exceed 120 mW of power dissipation.
The transistors are housed in an EMT6 package.
The typical hFE ranges from 270 to 680.