EMD12 / UMD12N Transistors are dual digital transistors produced by ROHM. This transistor has the characteristics of small input resistance, wide working voltage range, low power consumption, and high working frequency. It is suitable for power management, logic circuits and other fields.
The ROHM EMD12/UMD12N is a dual‑digit (dual‑NPN/PNP) transistor offered in EMT6 and UMT6 surface‑mount packages. The document lists package markings, dimensions and the basic ordering unit.
Key electrical parameters include a maximum power dissipation of 120 mW per element, supply voltage ratings of ±5 V, and typical resistance values of 47 kΩ for R1 and R2. Characteristic curves for input voltage versus output current, DC current gain and output voltage are provided for various temperature conditions. This manual is written in Chinese.
| Maximum Power Dissipation | 120 mW per element |
|---|---|
| Supply Voltage (VCC) | ±5 V |
| Resistor Values R1 / R2 | 47 kΩ each |
The maximum power dissipation is 120 mW per element.
The device can be operated with a supply voltage of ±5 V.