The QS5U27 is a 2.5V drive Pch+SBD MOS FET with low voltage drive, low on-state resistance, fast switching, and a built-in Schottky diode. It is used in load switching, DC/DC conversion and other applications.
The QS5U27 is a P‑channel MOSFET combined with a Schottky barrier diode in a TSMT5 package. It offers low on‑state resistance, fast switching, and a low‑voltage (2.5 V) drive, making it suitable for load‑switch and DC‑DC conversion applications.
The document lists absolute maximum ratings, typical electrical parameters, and characteristic curves, along with measurement circuit examples and packaging details. Key specifications such as drain‑source voltage, continuous drain current, and gate charge are provided for designers.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +12 V |
| Continuous drain current (ID) | 41.5 A |
| Pulsed drain current (ID,pulse) | 6.0 A |
| Power dissipation (PD) per element | 0.9 W |
| Forward voltage of built‑in Schottky diode (Vsp) | 1.2 V |
| Forward voltage of external diode (VF) | 0.45 V |
| Input capacitance (Ciss) | 325 pF |
| Output capacitance (Coss) | 60 pF |
The maximum drain‑source voltage is –20 V.
The built‑in Schottky diode has a forward voltage of 1.2 V.
The device can handle a continuous drain current of 41.5 A.