The QS5U16 is a transistor that combines an Nch MOSFET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversion.
The QS5U16 integrates an N‑channel MOSFET and a Schottky barrier diode in a compact TSMT5 package. It is intended for load‑switch and DC‑DC conversion applications and features low on‑state resistance, fast switching, and a low‑voltage (2.5 V) drive.
The device’s key electrical ratings include a 30 V drain‑source voltage, 12 V gate‑source voltage, 2.0 A continuous drain current, and 8.0 A pulsed drain current. It is supplied in a TSMT5 surface‑mount package (Type Code TR) and includes detailed characteristic curves for on‑resistance, transfer, and switching behavior.
| Drain‑source voltage (Voss) | 30 V |
|---|---|
| Gate‑source voltage (Vass) | 12 V |
| Continuous drain current (Ib) | 2.0 A |
| Pulsed drain current (Ipp) | 8.0 A |
| Reverse voltage (VR) | 20 V |
| Power dissipation per element (Pp) | 0.9 W |
| Package type | TSMT5 (Type Code TR) |
The device can withstand up to 30 V between drain and source.
It is rated for a continuous drain current of 2.0 A.
The QS5U16 is offered in a TSMT5 surface‑mount package, Type Code TR.
It is suitable for load‑switch and DC‑DC conversion circuits.