QS5U21 is a 2.5V drive Pch+SBD MOS FET. The device has low on-state resistance and fast switching characteristics, built-in schottky barrier diode, low forward voltage, suitable for load switch and DC/DC conversion applications.
The QS5U21 is a P‑channel MOSFET combined with a Schottky barrier diode in a TSMT5 package. It offers low on‑state resistance, fast switching, and a low‑voltage drive of 2.5 V, making it suitable for load‑switch and DC‑DC conversion applications. Key features include a built‑in body diode with low forward voltage and robust ESD protection.
The document lists absolute maximum ratings, electrical characteristics, and typical performance curves. It also includes packaging information, application notes, and legal notices. Designers can use the provided characteristic curves and measurement circuits to evaluate the device in their circuits.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | 2 V |
| Continuous drain current (ID) | 15 A |
| Power dissipation (PD) | 0.9 W |
| Junction temperature (TJ) | 150 °C |
The maximum drain‑source voltage is 20 V.
The continuous drain current rating is 15 A.
The gate threshold voltage ranges from –0.7 V to –2.0 V.