QS5U17 is a 2.5V drive Nch+SBD MOS FET with low on-state resistance, fast switching, low voltage drive (2.5V), and is widely used in load switching and DC/DC conversion.
The QS5U17 is an N‑channel MOSFET combined with a Schottky barrier diode in a single TSMT5 package. It offers low on‑state resistance, fast switching, and low‑voltage drive capability, making it suitable for load‑switch and DC‑DC conversion applications.
The datasheet lists absolute maximum ratings, electrical characteristics, and typical performance curves, along with packaging details and measurement circuit examples to aid designers in implementing the device safely and efficiently.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 2.0 A |
| Pulsed drain current (ID,pulse) | 8.0 A |
| Power dissipation (MOSFET) | 0.9 W |
| Reverse voltage (body diode) | 20 V |
| Forward current (body diode) | 1.0 A |
The maximum drain‑source voltage is 30 V.
The device can handle a continuous drain current of 2.0 A.
The gate‑source voltage rating is 12 V.
The body diode can withstand a reverse voltage of 20 V.