QS5U26 Transistor Rev.B is a Pch+ SBD MOSFET with features including low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for switching applications.
The QS5U26 integrates a P‑channel MOSFET and a built‑in Schottky barrier diode in a TSMT5 package. It provides low on‑state resistance, fast switching, and can be driven with as little as 2.5 V. Key features include low forward voltage of the diode and ESD protection.
Typical applications are switching circuits in audio‑visual, office‑automation, communication devices and other electronic equipment. The device’s absolute maximum ratings, electrical characteristics and characteristic curves are detailed in the datasheet, along with guidance on thermal considerations for reliable operation.
| Maximum Drain‑Source Voltage (VDS) | -20 V |
|---|---|
| Maximum Gate‑Source Voltage (VGS) | ±12 V |
| Typical On‑State Resistance (RDS(on)) | 180 mΩ |
| Schottky Diode Forward Voltage (VF) | 0.36 V |
The maximum drain‑source voltage is -20 V.
Typical RDS(on) is 180 mΩ.
The typical forward voltage is 0.36 V.