2SA1576UB is a PNP silicon epitaxial planar transistor produced by ROHM, which is suitable for general small signal amplifiers and has excellent hFE linearity and good complementarity
The 2SA1576UB is a general‑purpose small‑signal PNP transistor designed for use in audio‑visual, office‑automation, communication, and other electronic equipment. The datasheet includes absolute maximum ratings, typical electrical characteristics, and application circuit examples.
Key specifications include a collector‑base voltage of 60 V, collector‑emitter voltage of 50 V, and a typical DC current gain (hFE) ranging from 120 to 390. The document also lists the transition frequency of 140 MHz and provides characteristic curves for design reference.
| Collector‑base voltage (Vcbo) | 60 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 50 V |
| Emitter‑base voltage (Vebo) | -6 V |
| Collector current (Ic) | 150 mA |
| Power dissipation (Pd) | 200 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -65 to +150 °C |
| DC current gain (hFE) | 120 – 390 |
| Transition frequency (fT) | 140 MHz |
| Output capacitance (Cob) | 4.0 – 5.0 pF |
The maximum collector‑base voltage is 60 V.
The typical DC current gain ranges from 120 to 390.
The device can be stored from –65 °C to +150 °C.