This document describes the features and dimensions of the high-voltage amplifier transistors 2SA1579 / 2SA1514K produced by ROHM, as well as their packaging specifications, electrical characteristics, and absolute maximum ratings.
The 2SA1514K is a high‑voltage NPN amplifier transistor designed for applications requiring a collector‑emitter breakdown voltage of -120 V and a collector current limit of -50 mA. It is offered in a surface‑mount UMT3 package and is suitable for audio‑visual, office‑automation, communication and other general‑purpose electronic equipment.
Key specifications include a breakdown voltage (BVceo) of -120 V, power dissipation of 0.2 W, junction temperature rating up to 150 °C, and storage temperature range of 55 °C to +150 °C. The datasheet also provides characteristic curves for collector‑emitter voltage, current gain, and capacitance.
| Collector‑emitter breakdown voltage (BVceo) | -120 V |
|---|---|
| Collector current (Ic) | -50 mA |
| Power dissipation (Po) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | 55 °C to +150 °C |
| Package type | UMT3 (SMT) |
The maximum collector‑emitter voltage is -120 V.
The transistor can handle up to -50 mA of collector current.
It is supplied in a UMT3 surface‑mount package.