The AO4420 is a N-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd., which has good RDS(ON), short circuit immunity and body diode characteristics, and is suitable for use as a synchronous switch in PWM applications.
The AO4420L is an N‑channel enhancement mode field‑effect transistor designed with trench technology for excellent shoot‑through immunity and body‑diode performance. It is intended for use as a synchronous switch in PWM applications and is offered in a lead‑free SO‑8 package.
The document lists absolute maximum ratings, detailed electrical and thermal characteristics, typical performance curves, marking description, recommended land‑pattern dimensions, and tape‑and‑reel handling data for the AO4420L device.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 13.7 A |
| On‑Resistance (RDS(on)) Typical | 12.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 0.6 – 1.1 V |
| Input Capacitance (Ciss) | 3.6 – 4.0 pF |
| Output Capacitance (Coss) | 256 pF |
| Power Dissipation (PD) @ 25°C | 3.1 W |
| Junction Temperature Range | -55 °C to 150 °C |
The AO4420L can withstand a drain‑source voltage of up to 30 V.
The device is rated for a continuous drain current of 13.7 A at 25 °C.
The AO4420L is supplied in a lead‑free SO‑8 package.