This document is about the absolute maximum ratings of irf3205pbf. It has extremely low on-resistance and dynamic dv/dt rating. It can operate at 175°C junction temperature and has fast switching speed and improved repetitive avalanche rating. It is an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.
The IRF1607 is a HEXFET® power MOSFET designed for automotive and other high‑current applications. It features a low on‑resistance, high current capability, and a 175 °C junction operating temperature.
The document provides absolute maximum ratings, detailed electrical parameters, thermal resistance values, typical characteristic curves, and mechanical dimensions for the TO‑220AB package.
| Drain‑to‑Source Breakdown Voltage (VDS) | 75 V |
|---|---|
| Continuous Drain Current @ 25 °C (ID) | 142 A |
| Pulsed Drain Current (IDM) | 570 A |
| Power Dissipation (PD) @ 25 °C | 380 W |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.40 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62 °C/W |
| Package Type | TO‑220AB |
The IRF1607 can handle a continuous drain current of 142 A at 25 °C with VGS = 10 V.
The device is rated for a drain‑to‑source breakdown voltage of 75 V.
The MOSFET is supplied in a TO‑220AB package.