TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology from Vishay Semiconductors. It features extra high radiant power and radiant intensity, high reliability, low forward voltage, suitable for high pulse current operation, and good spectral matching to Si photodetectors. It is suitable for applications such as infrared remote control units with high power requirements, free air transmission systems, infrared source for optical counters and card readers, IR source for smoke detectors.
The TSAL6100 is a high‑efficiency infrared emitting diode built with GaAlAs/GaAs technology and molded in a clear, blue‑grey tinted plastic package. It offers more than 100 % radiant‑power improvement over standard GaAs devices, a low forward voltage, and is suitable for high‑pulse‑current operation. Features include extra radiant power, high reliability, RoHS‑compliant lead‑free construction, and a standard T‑1¾ (Ø 5 mm) package.
The datasheet provides absolute maximum ratings, electrical and optical characteristics, and package dimensions. Typical forward voltage is 1.6 V at 100 mA, peak wavelength is 940 nm, and radiant power reaches 210 mW. The device is intended for infrared remote‑control units, free‑air transmission systems, optical counters, card readers, and smoke detectors.
| Peak wavelength | 940 nm |
|---|---|
| Typical forward voltage (100 mA) | 1.6 V |
| Maximum forward current (pulse) | 1.5 A |
| Radiant power (typical, 100 mA) | 210 mW |
| Junction temperature (max) | 100 °C |
| Radiant intensity (typical, 100 mA) | 130 mW/sr |
The TSAL6100 has a peak wavelength of 940 nm.
The typical forward voltage at 100 mA is about 1.6 V.
The device can handle a surge forward current of up to 1.5 A for a 100 µs pulse.
The maximum junction temperature rating is 100 °C.