The document describes the features and characteristics of UniFET TM FDP26N40 / FDPF26N40 N-Channel MOSFET, including maximum ratings, thermal characteristics, and performance parameters.
The FDP26N40 and FDPF26N40 are N‑Channel enhancement‑mode power MOSFETs designed for high‑efficiency switched‑mode power supplies and active power factor correction. They feature low gate charge, low on‑resistance, and are RoHS compliant.
Key specifications such as the 400 V drain‑source rating, 26 A continuous drain current, thermal resistance values, and package dimensions are detailed in the electrical, thermal, and mechanical sections of the document. Test circuit diagrams illustrate switching and diode recovery performance.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.5 °C/W |
Yes, the datasheet states that the device is RoHS compliant.