This is a technical document about the QFET product.
The FQA28N15 is a 150 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for audio amplifiers, DC‑DC converters and motor‑control applications.
The document provides absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical performance curves, and test circuit diagrams, along with mechanical dimensions for the TO‑3P package.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 33 A |
| Continuous Drain Current (ID) at 100 °C | 23.3 A |
| On‑Resistance (RDS(on)) | 0.092 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 40 nC |
| Maximum Junction Temperature | 175 °C |
| Junction‑to‑Case Thermal Resistance | 0.66 °C/W |
The device can handle a continuous drain current of 33 A at 25 °C.
The typical gate charge is 40 nC.
The maximum junction temperature rating is 175 °C.
It is supplied in a TO‑3P package.