ISL9N308AD3 / ISL9N308AD3ST is a N-Channel Logic Level UltraFET® Trench Power MOSFET manufactured by Fairchild Semiconductor Corporation. It has a rated voltage of 30V, current of 50A, and on-resistance of 8mΩ.
The ISL9N308AD3 is a 30 V, 50 A N‑channel Logic Level UltraFET® trench power MOSFET optimized for high‑efficiency switching applications such as DC‑DC converters. It features low gate charge and low on‑resistance to improve overall converter efficiency and allow operation at higher switching frequencies.
Key specifications include a continuous drain current of 50 A, typical on‑resistance of 0.00642 Ω, gate charge of 24 nC, and input capacitance of 2600 pF. Thermal characteristics are provided for the TO‑252 and TO‑251 packages, with a junction‑to‑case resistance of 1.5 °C/W. The document also contains typical characteristic curves, test circuit diagrams, and PSPICE models for design verification.
| Drain‑to‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Continuous Drain Current (I_D) | 50 A (Tc=25 °C, V_GS=10 V) |
| On‑Resistance (R_DS(on)) | 0.00642 Ω (typ) |
| Total Gate Charge (Q_g) | 24 nC (typ) |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.5 °C/W (TO‑252, TO‑251) |
The device can handle a continuous drain current of 50 A at 25 °C with a gate‑source voltage of 10 V.
The typical on‑resistance is 0.00642 Ω.
The junction‑to‑case thermal resistance is 1.5 °C/W for the TO‑252 (and TO‑251) package.