NDH834P is a P-Channel enhancement mode field effect transistor suitable for low voltage applications. It features fast switching, low on-state resistance, and resistance to transients.
The NDH834P is a P‑Channel enhancement mode power field‑effect transistor offered in a SuperSOT‑8 package. It is designed for low‑voltage, high‑current applications such as battery‑powered circuits and portable electronics, delivering low on‑resistance and fast switching performance.
The document lists absolute maximum ratings, electrical and thermal characteristics, typical performance curves, and guidelines for board layout and thermal management, enabling designers to evaluate the device for their circuits.
| Drain‑Source Voltage (VDS) | -20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +8 V |
| Continuous Drain Current (ID) | 5.6 A |
| Maximum Power Dissipation (PD) | 1.8 W |
| Junction‑to‑Ambient Thermal Resistance (θJA) | 70 °C/W |
The device can handle a continuous drain current of 5.6 A.
The NDH834P is rated for a drain‑source voltage of –20 V.
Typical on‑resistance values are between 0.029 Ω and 0.035 Ω.
The junction‑to‑ambient thermal resistance is 70 °C/W.