This document describes the features and characteristics of the CNY17 series phototransistor optocouplers, including UL and VDE recognition, high BV CEO, various options, etc.
The CNY17 series are Gallium Arsenide infrared emitter (IRED) coupled with an NPN phototransistor, offered in black and white (‑M) packages. They are intended for use in power‑supply regulators, digital logic, microprocessor inputs, appliance sensor systems, and industrial controls.
The datasheet provides detailed electrical parameters, isolation ratings, transfer characteristics, switching times, and recommended reflow soldering profiles for both package types.
| Storage Temperature | -55 to +150 °C |
|---|---|
| Operating Temperature | -55 to +100 °C |
| Lead Solder Temperature | 260 °C for 10 s |
| Total Device Power Dissipation (LED + detector) –M | 250 mW |
| Continuous Forward Current (Emitter) –M | 60 mA |
| Reverse Voltage (Emitter) | 6 V |
| Peak Forward Current (1 µs pulse, 300 pps) –M | 1.5 A |
| LED Power Dissipation @ 25 °C –M | 120 mW |
| Detector Power Dissipation @ 25 °C –M | 150 mW |
| Isolation Voltage (Black Package) | 5300 Vac rms (≈9000 Vac pk) |
| Isolation Voltage (White Package) | 7500 Vac pk |
| Isolation Resistance | 10^11 Ω |
| Isolation Capacitance (Black Package) | 0.5 pF |
| Isolation Capacitance (White Package) | 0.2 pF |
They can be stored from –55 °C up to +150 °C.
The black package provides 5300 Vac rms (about 9000 Vac peak) for 1 minute.
The –M version is rated for a continuous forward current of 60 mA.
The recommended lead solder temperature is 260 °C for 10 seconds.