XN0A312 is a NPN+PNP composite transistor produced by Toshiba. It is used in switching/digital circuits.
The XNOA312 is a composite NPN/PNP epitaxial planar transistor that incorporates two transistors and a built‑in resistor in a single SC‑74A package. It reduces mounting area and assembly cost while offering typical switching and digital circuit performance.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and typical characteristic curves for both transistor elements. It also includes export and usage notices, advising customers to verify the latest specifications before design and purchase.
| Collector‑to‑Base Voltage (Vcbo) | 50 V |
|---|---|
| Collector‑to‑Emitter Voltage (Vceo) | 50 V |
| Collector Current (Ic) | 100 mA |
| Total Power Dissipation (Pd) | 300 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 to +150 °C |
The maximum collector current is 100 mA.
The device can dissipate up to 300 mW.
They are intended for standard applications such as office equipment, communications equipment, measuring instruments, and household appliances.