MA3S132A / MA3S132K is a Schottky diode with short reverse recovery time and small terminal capacitance, suitable for switching circuits
The MA3S132A and MA3S132K are silicon epitaxial planar diodes offered by Panasonic. They feature a short reverse recovery time, low terminal capacitance, and are suitable for high‑density mounting in switching circuits.
The datasheet provides absolute maximum ratings, typical electrical characteristics, and characteristic charts. It also includes export and usage precautions for standard electronic equipment such as office, communications, and measuring devices.
| Reverse voltage (VR) | 80 V |
|---|---|
| Maximum peak reverse voltage (Vem) | 80 V |
| Forward current (If) | 100 mA |
| Peak forward current (If peak) | 225 mA |
| Non‑repetitive peak forward surge current | 500 mA |
| Junction temperature rating (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Typical forward voltage (Vf) at 100 mA | 1.2 V |
| Reverse current (Ir) at VR=80 V | 100 nA |
| Terminal capacitance (Cj) | 2 pF |
| Reverse recovery time (trr) | 3 ns |
The maximum reverse voltage is 80 V.
The typical forward voltage is 1.2 V at 100 mA.
They can be stored from –55 °C to +150 °C.
The junction temperature rating is 150 °C.