IR2132 is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. It features a floating channel designed for bootstrap operation and can operate up to +600V. It has over-current shutdown, undervoltage lockout, and independent half-bridge drivers. The outputs are out of phase with the inputs and have matched propagation delay. IR2132 can drive N-channel power MOSFETs or IGBTs in the high side configuration up to 600 volts.
The IR2132 driver provides three independent high‑ and low‑side referenced output channels for 3‑phase bridge applications. It features a floating channel for bootstrap operation, a gate‑drive supply range of 10‑20 V, and built‑in undervoltage lockout and over‑current shutdown for all six drivers. The device includes a ground‑referenced operational amplifier for analog feedback and an open‑drain FAULT output.
Electrical specifications include operation up to +600 V, typical turn‑on propagation delay of 675 ns, turn‑off delay of 425 ns, and support for DIP, SOIC and PLCC packages. The driver is rated for ambient temperatures from –40 °C to 125 °C and provides thermal resistance and power‑dissipation data for various package types.
| Floating channel for bootstrap operation | Yes |
|---|---|
| Maximum operating voltage | +600 V |
| Gate‑drive supply voltage range | 10 V – 20 V |
| Undervoltage lockout | Enabled for all channels |
| Over‑current shutdown | Turns off all six drivers |
| Typical turn‑on propagation delay | 675 ns |
| Typical turn‑off propagation delay | 425 ns |
| Package options | 28‑lead PDIP, 28‑lead SOIC, 44‑lead PLCC |
| Ambient temperature range | -40 °C to 125 °C |
| Power dissipation (28‑lead DIP) | 1.5 W |
The IR2132 can operate up to +600 V.
It provides three independent high‑ and low‑side referenced output channels.
The typical turn‑on propagation delay is about 675 ns.
A gate‑drive supply voltage of 10 V to 20 V is recommended.