The IR2308(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
The IR2308 (and lead‑free IR2308PbF) is a high‑voltage, high‑speed power MOSFET/IGBT driver with floating high‑side channel, suitable for bootstrap operation up to 600 V. It offers a wide gate‑drive supply range (10‑20 V), undervoltage lockout, cross‑conduction prevention and programmable dead‑time.
The device is offered in 8‑lead SOIC and 8‑lead PDIP packages, with both standard and lead‑free versions. Detailed absolute maximum ratings, recommended operating conditions, dynamic electrical characteristics and mechanical dimensions are provided for designers.
| Maximum high‑side floating supply voltage (VB) | 625 V |
|---|---|
| Package power dissipation (8‑lead PDIP) | 1.0 W |
| Turn‑on propagation delay (typ) | 220 ns |
The IR2308 is offered in 8‑lead SOIC and 8‑lead PDIP packages, and both standard and lead‑free (PbF) versions are available.
The high‑side floating supply (VB) is recommended at 10 V to 20 V, while the floating supply offset (Vs) can be up to 600 V.
The logic input voltage (VIN) is limited to -0.3 V to +0.3 V relative to COM.