IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.
The IR2105 half‑bridge driver provides a floating high‑side channel for bootstrap operation and supports MOSFET or IGBT loads up to 600 V. It features a gate‑drive supply range of 10 V to 20 V, built‑in undervoltage lockout, Schmitt‑triggered inputs, and internal dead‑time generation to prevent cross‑conduction.
The device is offered in 8‑lead PDIP and SOIC packages, with typical propagation delays of 680 ns (turn‑on) and 150 ns (turn‑off) and a typical dead‑time of 520 ns. It operates over an ambient temperature range of –40 °C to 125 °C and can dissipate up to 1 W (DIP) or 0.625 W (SOIC) under still‑air conditions.
| Maximum operating voltage (VB) | 600 V |
|---|---|
| Gate‑drive supply range (Vg) | 10 V to 20 V |
| Turn‑on propagation delay (ton) | 680 ns typ. |
| Dead‑time | 520 ns typ. |
| Supply voltage range (Vs) | 10 V to 20 V |
| Ambient temperature range | -40 °C to 125 °C |
| Maximum junction temperature | 150 °C |
The IR2105 is fully operational up to 600 V.
The typical dead‑time is 520 ns.
It operates from –40 °C to 125 °C ambient temperature.
The driver requires a gate‑drive supply between 10 V and 20 V.