The IRS2183/IRS21834 are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
The IRS2183 and IRS21834 are high‑voltage, high‑speed power MOSFET and IGBT drivers featuring a floating channel for bootstrap operation, a supply range of 10 V‑20 V, and robust protection against negative transients. They support up to 600 V on the high‑side floating channel and provide source/sink currents of 1.4 A and 1.8 A respectively.
The document includes detailed absolute maximum ratings, recommended operating conditions, static and dynamic electrical characteristics, functional block diagrams, pin assignments, package options (8‑lead PDIP, 8‑lead SOIC, 14‑lead PDIP, 14‑lead SOIC), and mechanical dimensions for tape‑and‑reel handling.
| Maximum high‑side floating absolute voltage | 620 V |
|---|---|
| Output source/sink current capability | 1.4 A (source) / 1.8 A (sink) |
| Gate‑drive supply voltage range | 10 V – 20 V |
| Thermal resistance (RthJA) for 8‑lead SOIC | 200 °C/W |
| Ambient temperature operating range | -40 °C to 125 °C |
The high‑side floating channel can handle up to 620 V.
The recommended gate‑drive supply voltage is 10 V to 20 V.
The driver can source 1.4 A and sink 1.8 A.
The thermal resistance (RthJA) for the 8‑lead SOIC is 200 °C/W.